Semiconductors: Problems and Solutions - Electronic Properties of Materials | Deepak Rajput

Electronic Properties of Materials: Semiconductors - Problems and Solutions

Calculate the intrinsic concentration (n_i) in silicon, germanium, and gallium arsenide using the density of states effective masses given below:

$tabular{1111}{11111}{- Ge Si GaAs {m_e}^*/{m_e} 0.56 1.08 0.067 {m_h}^*/{m_e} 0.4 0.6 0.5}$
Using the data in the table shown above, determine the position of the Fermi energy (with respect to E_g/2) in silicon, germanium, and gallium arsenide.
Find the resistance of a silicon crystal of length 5 cm and cross section 1 cm² that has been doped with boron (concentration 10¹⁶ cm^-3).
An n-type semiconductor silicon initially doped with 10¹⁶ cm^-3 antimony atoms is compensated doped with 10¹⁷ cm^-3 indium atoms. Calculate the resistivity of the sample at 300 K and 400 K.
For an n-type semiconductor silicon sample doped with 10¹⁷ cm^-3 arsenic atoms, determine the excess hole concentration (P_n) for a weak illumination of 0.1%. Also, find the resistivity of the sample at 300 K and 400 K.
Explain schematically the concept of radiative and non-radiative recombination of electron-hole pairs in semiconductors. What kind of recombination takes place in indium phosphide and gallium phosphide semiconductors?
Write a paragraph on Amorphous Semiconductors and their applications.
Explain schematically the concept of Schottky barrier diode with and without biasing.
Explain schematically with the help of band diagram the functioning of a light emitting diode.
The band gap of GaAs changes with temperature as dEg/dT = -4.5 x 10^-4 eV/K. Determine the change in the emitted wavelength if the temperature change is 15 K?